Cui Peng
Professor
崔鹏，教授，博士生导师，国家海外高层次青年人才，ray电竞官网杰出中青年学者，齐鲁青年学者。2018年6月获ray电竞官网微电子学院博士学位。2018年7月至2021年7月在美国特拉华大学电子与计算机工程系从事博士后研究。主要研究方向为半导体器件，包括功率器件、射频器件、光电器件等，迄今为止，在本领域权威期刊发表学术论文70余篇，第一作者/通讯作者SCI论文30余篇，申请/授权国家发明专利30余项。主持国家自然科学基金青年基金、山东省优秀青年基金（海外）、山东省自然科学基金、山东... More+
Paper Publications
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[1] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
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[2] 陈思衡. High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V. IEEE Electron Device Letters, 12, 2343, 2024.
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[3] 罗鑫. Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer. APPLIED PHYSICS LETTERS, 125, 2024.
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[4] 王鸣雁. Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs. APPLIED PHYSICS LETTERS, 2024.
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[5] 王鸣雁. Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs. APPLIED PHYSICS LETTERS, 2024.
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[6] 王鸣雁. Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs. IEEE ACCESS, 2024.
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[7] 王明绪. Toward low-power-consumption source-gated phototransistor. APPLIED PHYSICS LETTERS, 2024.
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[8] 陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics, 213, 2024.
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[9] 罗鑫. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors. Journal of Physics and Chemistry of Solids, 187, 2024.
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[10] 张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode. IEEE Transactions on Electron Devices, 2024.
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[11] Jiang, Guangyuan. Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack. SOLID-STATE ELECTRONICS, 201, 2023.
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[12] 王鸣雁. Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT. IEEE Electron Device Letters, 2023.
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[13] 周衡. Study on the frequency characteristics of split-gate AlGaN/GaN HFETs. Modern Physics Letters B, 2023.
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[14] 王鸣雁. A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs. IEEE Transactions on Electron Devices, 1-5, 2023.
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[15] 崔鹏. Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors. MICROELECTRONICS JOURNAL, 129, 105602, 2022.
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[16] 崔鹏. Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment. Crystals, 12, 1521, 2022.
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[17] 崔鹏. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications. Scientific Reports, 12, 16683, 2022.
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[18] 周衡. Study of electrical transport properties of GaN-based side-gate heterostructure transistors. APPLIED PHYSICS LETTERS, 2022.
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[19] 王鸣雁. Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs. IEEE Electron Device Letters, 2022.
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[20] Peng Cui and Yuping Zeng. Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation. Nanomaterials , 1718, 2022.